Title :
InGaN MQW laser diode with integrated intracavity electroabsorption modulator
Author :
Kneissl, Michael ; Paoli, Thomas L. ; Kiesel, Peter ; Treat, David W. ; Teepe, Mark ; Miyashita, Naoko ; Johnson, Noble M.
Author_Institution :
Palo Alto Res. Center Inc., CA, USA
Abstract :
Summary form only given. We demonstrate a two-section InGaN multiple-quantum-well (MQW) laser diode comprised of an amplifier section and a monolithically integrated electroabsorption (EA) modulator. Modulator and gain sections are electrically separated by a narrow dry etched trench, but are optically coupled and share the same InGaN MQW active region. The basic concept of the device is to utilize the strong built-in piezoelectric fields in the InGaN MQW active region to achieve the necessary wavelength offset between the emission wavelength of the amplifier section and the absorption edge of the EA modulator.
Keywords :
III-V semiconductors; electro-optical modulation; electroabsorption; etching; gallium compounds; indium compounds; integrated optoelectronics; piezoelectricity; quantum well lasers; InGaN; InGaN MQW laser diode; absorption edge; electrically separated; gain sections; integrated intracavity electroabsorption modulator; monolithically integrated electroabsorption modulator; narrow dry etched trench; strong built-in piezoelectric fields; two-section InGaN multiple-quantum-well laser diode; wavelength offset; Absorption; Diode lasers; III-V semiconductor materials; Laser modes; Optical amplifiers; Optical materials; Power amplifiers; Power lasers; Quantum well devices; Switches;
Conference_Titel :
Semiconductor Laser Conference, 2002. IEEE 18th International
Print_ISBN :
0-7803-7598-X
DOI :
10.1109/ISLC.2002.1041149
