Title :
On resistance-leakage current trade-off in low-voltage power PMOSFETs
Author :
Darwish, Mohamed N. ; Williams, Richard K. ; Shekar, M.S. ; Chan, T.Y.
Author_Institution :
Siliconix Inc., Santa Clara, CA, USA
Abstract :
The trade-offs that impact minimizing on-resistance while maintaining an acceptable level of leakage current in very low on-resistance buried p-channel MOSFETs are investigated. Gate induced drain leakage (GIDL) current in power PMOSFETs is studied both experimentally and by using numerical simulations. The effect of several carrier generation mechanisms such as band-to-band tunneling, avalanche multiplication and thermal generation on leakage current are also discussed
Keywords :
leakage currents; power MOSFET; avalanche multiplication; band-to-band tunneling; buried p-channel MOSFET; carrier generation; gate induced drain leakage current; low-voltage power PMOSFET; numerical simulation; on-resistance; thermal generation; Charge carrier processes; Current density; Energy management; Immune system; Leakage current; MOSFETs; Numerical simulation; Personal communication networks; Tunneling; Voltage;
Conference_Titel :
Power Semiconductor Devices and ICs, 1995. ISPSD '95., Proceedings of the 7th International Symposium on
Conference_Location :
Yokohama
Print_ISBN :
0-7803-2618-0
DOI :
10.1109/ISPSD.1995.515046
