Title :
Optimisation of 635 nm tensile strained GaInP laser diodes
Author :
Smowton, P.M. ; Lewis, G.M. ; Chow, W.W. ; Jones, G. ; Bland, S.
Author_Institution :
Dept. of Phys. & Astron., Cardiff Univ., UK
Abstract :
Summary form only given. We have measured the affect of strain on each of the recombination mechanisms that make up the total threshold current within 635nm laser diodes with a range of strain-well width combinations. Nonradiative recombination within the quantum well is a significant proportion of the total threshold current and determines the optimum strain-well width combination.
Keywords :
III-V semiconductors; gallium compounds; indium compounds; laser transitions; optimisation; quantum well lasers; 635 nm; GaInP; nonradiative recombination; optimum strain-well width combination; quantum well; recombination mechanisms; strain-well width combinations; tensile strained GaInP laser diode optimisation; total threshold current; Capacitive sensors; Current density; Current measurement; Diode lasers; Polarization; Quantum well lasers; Radiative recombination; Spontaneous emission; Tellurium; Threshold current;
Conference_Titel :
Semiconductor Laser Conference, 2002. IEEE 18th International
Print_ISBN :
0-7803-7598-X
DOI :
10.1109/ISLC.2002.1041150
