Title :
Field-induced charged device model testing of magnetoresistive recording heads
Author :
Wallash, Albert J.
Author_Institution :
Quantum, Milpitas, CA, USA
Abstract :
This paper reports on the behavior of a magnetoresistive (MR) recording head in external electric fields for the first time. Both energy and voltage failure thresholds during field-induced charged device model (CDM) testing are measured. An equivalent circuit model for the MR head is constructed and used in PSPICE circuit simulations. The first atomic force microscope (AFM) data and SEM micrographs of CDM damaged MR heads are also presented and analyzed.
Keywords :
SPICE; atomic force microscopy; electric fields; equivalent circuits; failure analysis; magnetic heads; magnetoresistive devices; modelling; scanning electron microscopy; testing; AFM data; MR head damage; PSPICE circuit simulation; SEM micrographs; atomic force microscope data; energy failure threshold; equivalent circuit model; external electric fields; failure mechanisms; field-induced charged device model testing; magnetoresistive recording heads; voltage failure threshold; Atomic force microscopy; Circuit modeling; Electric fields; Electron microscopy; Equivalent circuits; Failure analysis; Magnetic heads; Magnetoresistive devices; Reliability testing; SPICE;
Conference_Titel :
Electrical Overstress/Electrostatic Discharge Symposium, 1996. Proceedings
Print_ISBN :
1-878303-69-4
DOI :
10.1109/EOSESD.1996.865120
