Field-induced charged device model testing of magnetoresistive recording heads

Author

Wallash, Albert J.

Author_Institution

Quantum, Milpitas, CA, USA

fYear

1996

fDate

10-12 Sept. 1996

Firstpage

8

Lastpage

13

Abstract

This paper reports on the behavior of a magnetoresistive (MR) recording head in external electric fields for the first time. Both energy and voltage failure thresholds during field-induced charged device model (CDM) testing are measured. An equivalent circuit model for the MR head is constructed and used in PSPICE circuit simulations. The first atomic force microscope (AFM) data and SEM micrographs of CDM damaged MR heads are also presented and analyzed.

Keywords

SPICE; atomic force microscopy; electric fields; equivalent circuits; failure analysis; magnetic heads; magnetoresistive devices; modelling; scanning electron microscopy; testing; AFM data; MR head damage; PSPICE circuit simulation; SEM micrographs; atomic force microscope data; energy failure threshold; equivalent circuit model; external electric fields; failure mechanisms; field-induced charged device model testing; magnetoresistive recording heads; voltage failure threshold; Atomic force microscopy; Circuit modeling; Electric fields; Electron microscopy; Equivalent circuits; Failure analysis; Magnetic heads; Magnetoresistive devices; Reliability testing; SPICE;

fLanguage

English

Publisher

ieee

Conference_Titel

Electrical Overstress/Electrostatic Discharge Symposium, 1996. Proceedings

Print_ISBN

1-878303-69-4

Type

conf

DOI

10.1109/EOSESD.1996.865120

Filename

865120