Title :
High-power, high-efficiency 660-nm laser diodes for DVD-R/RW
Author :
Yagi, Tetsuya ; Nishiguchi, Harumi ; Yoshida, Yasuaki ; Miyashita, Motoharu ; Sasaki, Motoko ; Sakamoto, Yoshifumi ; Ono, Ken-ichi ; Mitsui, Yasuo
Author_Institution :
High Frequency & Opt. Semicond. Div., Mitsubishi Electr. Corp., Hyogo, Japan
Abstract :
The high-power operation of the lateral modes stabilized 660 nm AlGaInP laser diode (LD) with the real-refractive-index waveguide structure has been achieved. The stable lateral mode operation up to 143 mW at 70°C is realized. This is the highest power record among the narrow stripe 660-nm LDs. This LD Is suitable for the next generation high-speed (8x-) DVD-R/RW drives necessitating 140 mW class LD.
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; laser modes; laser stability; laser transitions; optical disc storage; semiconductor lasers; waveguide lasers; 140 mW; 143 mW; 660 nm; 70 degC; AlGaInP; AlGaInP laser diode; DVD-R/RW; high-efficiency 660-nm laser diodes; high-power; lateral modes; mW class LD; narrow stripe LDs; next generation high-speed DVD-R/RW drives; real refractive index waveguide structure; stable lateral mode operation; Absorption; Diode lasers; Gallium arsenide; High speed optical techniques; Optical losses; Optical waveguides; Power generation; Semiconductor waveguides; Temperature; Wet etching;
Conference_Titel :
Semiconductor Laser Conference, 2002. IEEE 18th International
Print_ISBN :
0-7803-7598-X
DOI :
10.1109/ISLC.2002.1041151
