A novel rectifier based on bipolar-mode SIT structure

Author

Yano, Koji ; Kasuga, Masanobu ; Shimizu, Azuma ; Mitsui, Masahito ; Moroshima, Heiji ; Morita, Jun-ichi

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., Yamanashi Univ., Kofu, Japan

fYear

1995

fDate

23-25 May 1995

Firstpage

273

Lastpage

278

Abstract

The authors propose a novel rectifier based on bipolar-mode static induction transistor (BSIT) operation. A numerical simulation has revealed that, this rectifier, which operates with a combination of static induction effects and minority carrier injection during forward conduction, exhibits a forward-voltage drop and a reverse recovery time that are smaller than those of the conventional p-i-n rectifiers, and without causing excessive leakage current. It is also shown that, at temperatures below 400 K, the steady state power dissipation for the rectifier using BSIT operation is superior to that for the p-i-n rectifiers and the Schottky rectifiers

Keywords

minority carriers; power bipolar transistors; solid-state rectifiers; static induction transistors; 400 K; bipolar-mode static induction transistor; forward-voltage drop; leakage current; minority carrier injection; numerical simulation; rectifier; reverse recovery time; steady state power dissipation; Leakage current; Numerical simulation; PIN photodiodes; Power dissipation; Power systems; Rectifiers; Semiconductor diodes; Steady-state; Temperature; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices and ICs, 1995. ISPSD '95., Proceedings of the 7th International Symposium on

Conference_Location

Yokohama

ISSN

1063-6854

Print_ISBN

0-7803-2618-0

Type

conf

DOI

10.1109/ISPSD.1995.515048

Filename

515048