Simulation study of nanoparticle melting behavior for lead free nano solder application

Author

Hai Dong ; Kyoung-sik Moon ; Hongjin Jiang ; Wong, C.P.

Author_Institution

Sch. of Mater. Sci. & Eng., Georgia Inst. of Technol., Atlanta, GA

fYear

0

fDate

0-0 0

Firstpage

107

Lastpage

107

Abstract

Summary form only given. Silver nanoparticle was used as model system for melting behavior study due to its wide application in the field of microelectronic packaging and the availability of force field. The embedded atom method (EAM) was employed in conjunction with molecular dynamics (MD) simulations to investigate the effect of particle size and temperature ramping up rate on nano silver melting behavior. Silver spheres with diameter of 10 nm and 4 nm were prepared, and the temperature was raised up to 1200 K at a ramping up rate of 0.1K/ps and 1K/ps respectively. [010] projection and pair correlation function (PCF) were applied to study the structural evolution of silver particles as temperature is ramping up. The melting point was derived by observing the abrupt increase in potential energy. The effect of particle size and temperature ramping up rate on melting point was investigated. Surface melting behavior was studied by comparing the micro-structure of silver atoms located in core/shell regions

Keywords

melting; molecular dynamics method; nanoparticles; particle size; silver; 10 nm; 4 nm; Ag; embedded atom method; lead free nanosolder; molecular dynamics simulations; nanoparticle melting behavior; nanosilver melting behavior; pair correlation function; particle size; potential energy; silver nanoparticle; silver particles; temperature ramping up rate; Environmentally friendly manufacturing techniques; Lead; Materials science and technology; Microelectronics; Moon; Packaging; Potential energy; Silver; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Advanced Packaging Materials: Processes, Properties and Interface, 200611th International Symposium on

Conference_Location

Atlanta, GA

ISSN

1550-5723

Print_ISBN

1-4244-0260-3

Type

conf

DOI

10.1109/ISAPM.2006.1666010

Filename

1666010