Title :
MOVPE-grown 1.3 μm emitting VCSEL with GaInNAs active region
Author :
Ramakrishnan, Abinesh ; Steinle, Gunter ; Pfeiffer, J. ; Degen, Christoph ; Stolz, Wolfgang
Author_Institution :
Infineon Technol., Munich, Germany
Abstract :
An MOVPE-grown VCSEL on GaAs substrate with a GaInNAs active region emitting at 1.3 μm with record laser-characteristics and data-transmission rate of 10 Gbit/s has been realized.
Keywords :
III-V semiconductors; MOCVD; gallium arsenide; indium compounds; infrared sources; laser transitions; optical transmitters; semiconductor lasers; surface emitting lasers; vapour phase epitaxial growth; 1.3 micron; 10 Gbit/s; GaInNAs; GaInNAs active region; MOVPE-grown; VCSEL; data-transmission rate; optical transmitter devices; vertical-cavity surface-emitting lasers; Epitaxial growth; Epitaxial layers; Gallium arsenide; Mirrors; Optical transmitters; Power lasers; Substrates; Surface emitting lasers; Temperature; Vertical cavity surface emitting lasers;
Conference_Titel :
Semiconductor Laser Conference, 2002. IEEE 18th International
Print_ISBN :
0-7803-7598-X
DOI :
10.1109/ISLC.2002.1041153
