DocumentCode
2366343
Title
First CW operation of 1.3 μm-range GaInNAsSb VCSELs and VCSEL array
Author
Shimizu, H. ; Setiagung, C. ; Ariga, M. ; Kumada, K. ; Hama, T. ; Ueda, N. ; Iwai, N. ; Kasukawa, A.
Author_Institution
Furukawa Electr. Co. Ltd., Yokohama, Japan
fYear
2002
fDate
2002
Firstpage
137
Lastpage
138
Abstract
First CW operation of 1.3 μm-range VCSELs and VCSEL array using GaInNAsSb quantum wells on GaAs substrates are reported. The threshold voltage is as low as 1.2 V, which is the lowest value ever reported for 1.3 μm-range GaInNAs-based VCSELs, and the threshold current. of 10ch-array are as uniform as 1.85 ± 0.15 mA at 25°C.
Keywords
III-V semiconductors; gallium arsenide; indium compounds; infrared sources; laser transitions; metropolitan area networks; optical fibre networks; optical transmitters; semiconductor laser arrays; surface emitting lasers; wide area networks; 1.2 V; 1.3 μm-range; 1.3 micron; 1.85 mA; 25 degC; CW operation; GaInNAsSb; GaInNAsSb VCSEL array; GaInNAsSb quantum well lasers; metro network; optical fibre network; optical transmitters; threshold current; threshold voltage; wide area network; Apertures; Distributed Bragg reflectors; Electrons; Gallium arsenide; Power generation; Resonance; Temperature dependence; Threshold current; Vertical cavity surface emitting lasers; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Laser Conference, 2002. IEEE 18th International
Print_ISBN
0-7803-7598-X
Type
conf
DOI
10.1109/ISLC.2002.1041154
Filename
1041154
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