DocumentCode :
2366363
Title :
Preparation of PZT ferroelectric thin films by electrochemical reduction
Author :
Ren, P.F. ; Zhu, J.L. ; Zou, X.P. ; Cheng, J. ; Li, F. ; Zhang, H.D. ; Zhu, G. ; Wang, M.F. ; Su, Y.
Author_Institution :
Res. Center for Sensor Technol., Beijing Inf. Technol. Inst., Beijing
fYear :
2008
fDate :
24-27 March 2008
Firstpage :
310
Lastpage :
314
Abstract :
In this paper, we report the growth of lead zirconate titanate (PZT) ferroelectric thin films, formed by means of the electrochemical reduction. In our experiment, the electrolyte was prepared by lead nitrate (Pb(NO3)2), zirconium oxide chloride (ZrOCl2-8H2O) and titanium chloride (TiCl3) solution. A graphite plate with 1 cm of width was employed as the anode, and a stainless steel plate was employed as both cathode and substrate. The controlled current that was supplied by a DC power supply passed through the electrolyte to deoxidize PZT precursor films on the surface of the stainless steel at room temperature. The results indicate that the atomic ratio of compositions in the film can be controlled by controlling the molar concentration of electrolytic solution, current density and reaction time. The perovskite PZT thin films can be obtained when the precursor films are heated to a certain temperature for sintering.
Keywords :
anodes; cathodes; electrochemistry; electrolytes; ferroelectric thin films; lead compounds; reduction (chemical); sintering; zirconium compounds; DC power supply; PZT; PZT thin films; anode; cathode; electrochemical reduction; electrolyte; electrolytic solution; graphite plate; lead nitrate; lead zirconate titanate ferroelectric thin film growth; molar concentration; precursor films; stainless steel plate; substrate; titanium chloride solution; zirconium oxide chloride; Anodes; Cathodes; Ferroelectric materials; Lead compounds; Steel; Substrates; Temperature control; Titanium compounds; Transistors; Zirconium;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Nanoelectronics Conference, 2008. INEC 2008. 2nd IEEE International
Conference_Location :
Shanghai
Print_ISBN :
978-1-4244-1572-4
Electronic_ISBN :
978-1-4244-1573-1
Type :
conf
DOI :
10.1109/INEC.2008.4585494
Filename :
4585494
Link To Document :
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