Title :
Higher drive current for SiGe nanowires
Author :
Chang, Kow-Ming ; Kuo, Jiun-ming ; Wu, Heng-hsin ; Tzeng, Wen-Hsien ; Wu, Tzu-liu ; Chao, Wen-chan
Author_Institution :
Dept. of Electron. Eng. Inst. of Electron., Nat. Chiao Tung Univ., Hsinchu
Abstract :
Nanowire is mainly used in biological sensor because it has the high surface-to-volume ratio. In this study, we have successfully fabricated the Poly-Si and SiGe nanowire with Ge = 7% and 11 % respectively by side-wall spacer technique. In order to normalize the drive current of nanowires, we consider the nanowire as a resistance. The conductance is chose for comparison between the nanowires. The higher conductance achieved of SiGe nanowire with/without nanowire implantation and the SiGe nanowire with higher Ge concentration had higher conductance. However, the disadvantage of lower contact resistance is found in SiGe pad. The 3-amino-propy-ltriethoxy-silane (APTES) was used to modify the surface, which can detect the charge with different pH. Comparing the conductance change; the SiGe nanowire with higher Ge concentration improved the sensitivity. But the over-higher Ge concentration (40%) did not increase the sensitivity; the reason maybe the higher defect appears at the surface as higher Ge concentration.
Keywords :
Ge-Si alloys; contact resistance; crystal defects; electrical conductivity; electrical resistivity; nanowires; organic compounds; pH; semiconductor quantum wires; 3-amino-propy-ltriethoxy-silane; SiGe; biological sensor; conductance; contact resistance; drive current; germanium concentration; nanowires; pH; side-wall spacer; surface defect; Germanium silicon alloys; Nanoelectronics; Nanowires; Silicon germanium;
Conference_Titel :
Nanoelectronics Conference, 2008. INEC 2008. 2nd IEEE International
Conference_Location :
Shanghai
Print_ISBN :
978-1-4244-1572-4
Electronic_ISBN :
978-1-4244-1573-1
DOI :
10.1109/INEC.2008.4585495