Title :
New power device figure of merit for high-frequency applications
Author :
Kim, II-Jung ; Matsumoto, Satoshi ; Sakai, Tatsuo ; Yachi, Toshiaki
Author_Institution :
NTT Interdisciplinary Res. Labs, Tokyo, Japan
Abstract :
A new power device figure of merit is proposed for high-frequency applications. Based on a theoretical analysis, the impacts of circuit topologies and material properties are examined. This figure of merit is very useful in optimizing or choosing a power device operating in high-frequency circuits. A thin-film SOI power MOSFET is taken as an example, and the effect of its device parameters on the power loss is analyzed to provide a basic guideline for optimization
Keywords :
capacitance; losses; power semiconductor devices; HF circuits; SOI power MOSFET; circuit topologies; high-frequency applications; material properties; power device figure of merit; power loss; thin-film MOSFET; Capacitance; Circuit topology; Frequency; MOSFET circuits; Magneto electrical resistivity imaging technique; Material properties; Power MOSFET; Switching loss; Thin film circuits; Zero voltage switching;
Conference_Titel :
Power Semiconductor Devices and ICs, 1995. ISPSD '95., Proceedings of the 7th International Symposium on
Conference_Location :
Yokohama
Print_ISBN :
0-7803-2618-0
DOI :
10.1109/ISPSD.1995.515055
