Channel Thickness Effect on High-Frequency Performance of Poly-Si Thin-Film Transistors

Author

Kun-Ming Chen ; Tzu-I Tsai ; Ting-Yao Lin ; Horng-Chih Lin ; Tien-Sheng Chao ; Guo-Wei Huang ; Tiao-Yuan Huang

Author_Institution

Nat. Nano Device Labs., Hsinchu, Taiwan

Volume

34

Issue

8

fYear

2013

fDate

Aug. 2013

Firstpage

1020

Lastpage

1022

Abstract

In this letter, we present the high-frequency performances of polycrystalline silicon (poly-Si) thin-film transistors (TFTs) with a nominal gate length of 0.22 μm. Owing to the short gate length and adoption of salicide process, cutoff frequency (f_T) of 17 GHz and maximum oscillation frequency of ~ 21 GHz are obtained. The result suggests that the poly-Si TFT technology is applicable to RF integrated circuits up to 2 GHz. In addition, we also investigate the effects of channel thickness on the high-frequency characteristics of poly-Si TFTs. We find that the variation of f_T with channel thickness is mainly due to the change in transconductance.

Keywords

elemental semiconductors; radiofrequency integrated circuits; silicon; thin film transistors; RF integrated circuits; Si; channel thickness effect; polycrystalline silicon; salicide process; thin film transistors; Channel thickness; gate length; radio frequency; thin-film transistors (TFTs); transconductance;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2013.2267809

Filename

6553156