Title :
Impact of Bias Voltage on Magnetic Inductance of Carbon Nanotube Interconnects
Author :
Narasimhamurthy, K.C. ; Paily, Roy P.
Author_Institution :
Dept. of ECE, Indian Inst. of Technol. Guwahati, Guwahati
Abstract :
Single-walled carbon nanotube (SWCNT) bundles have the potential to provide an attractive solution for the resistivity and electromigration problems faced by traditional copper interconnects. This paper discusses the impact of bias voltage variation on magnetic inductance of SWCNT bundle. The variation of bias voltage on inductance was ignored so far. The authors utilize existing models for SWCNT bundle for evaluation. There is a significant variation in inductance value within the available range of bias voltage. This study shows that the inductance change with respect to bias voltages is about 1% to 35% at different lengths of SWCNTs.
Keywords :
carbon nanotubes; copper; electrical resistivity; electromagnetic induction; electromigration; integrated circuit interconnections; bias voltage variation; carbon nanotube interconnects; electromigration problem; magnetic inductance; resistivity; single-walled carbon nanotube; traditional copper interconnect; Analog integrated circuits; Carbon nanotubes; Contact resistance; Copper; Electrons; Inductance; Inductors; Integrated circuit interconnections; Very large scale integration; Voltage; Carbon nanotube; Interconnects; Magnetic inductance; SWCNT;
Conference_Titel :
VLSI Design, 2009 22nd International Conference on
Conference_Location :
New Delhi
Print_ISBN :
978-0-7695-3506-7
DOI :
10.1109/VLSI.Design.2009.21
