Impact of Bias Voltage on Magnetic Inductance of Carbon Nanotube Interconnects

Author

Narasimhamurthy, K.C. ; Paily, Roy P.

Author_Institution

Dept. of ECE, Indian Inst. of Technol. Guwahati, Guwahati

fYear

2009

fDate

5-9 Jan. 2009

Firstpage

505

Lastpage

510

Abstract

Single-walled carbon nanotube (SWCNT) bundles have the potential to provide an attractive solution for the resistivity and electromigration problems faced by traditional copper interconnects. This paper discusses the impact of bias voltage variation on magnetic inductance of SWCNT bundle. The variation of bias voltage on inductance was ignored so far. The authors utilize existing models for SWCNT bundle for evaluation. There is a significant variation in inductance value within the available range of bias voltage. This study shows that the inductance change with respect to bias voltages is about 1% to 35% at different lengths of SWCNTs.

Keywords

carbon nanotubes; copper; electrical resistivity; electromagnetic induction; electromigration; integrated circuit interconnections; bias voltage variation; carbon nanotube interconnects; electromigration problem; magnetic inductance; resistivity; single-walled carbon nanotube; traditional copper interconnect; Analog integrated circuits; Carbon nanotubes; Contact resistance; Copper; Electrons; Inductance; Inductors; Integrated circuit interconnections; Very large scale integration; Voltage; Carbon nanotube; Interconnects; Magnetic inductance; SWCNT;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Design, 2009 22nd International Conference on

Conference_Location

New Delhi

ISSN

1063-9667

Print_ISBN

978-0-7695-3506-7

Type

conf

DOI

10.1109/VLSI.Design.2009.21

Filename

4749722