Title :
InAs-quantum-dots-based light emitting diodes with GaNAs strain-compensating layers
Author :
Kurimoto, M. ; Ganapathy, S. ; Zhang, X.Q. ; Uesugi, K. ; Kumano, H. ; Suemune, I.
Author_Institution :
Res. Inst. for Electron. Sci., Hokkaido Univ., Sapporo, Japan
Abstract :
GaNAs strain compensating layers have been used to obtain 1.5 μm luminescence from InAs quantum dots, and this fundamental scheme was demonstrated with light emitting diodes operating at room temperature.
Keywords :
III-V semiconductors; indium compounds; infrared spectra; light emitting diodes; photoluminescence; semiconductor quantum dots; 1.5 μm luminescence; 1.5 micron; GaNAs; GaNAs strain-compensating layers; IR luminescence; InAs; InAs-quantum-dots-based light emitting diodes; room temperature; Capacitive sensors; Compressive stress; Gallium arsenide; Indium gallium arsenide; Intrusion detection; Light emitting diodes; Luminescence; Photoluminescence; Quantum dots; Temperature;
Conference_Titel :
Semiconductor Laser Conference, 2002. IEEE 18th International
Print_ISBN :
0-7803-7598-X
DOI :
10.1109/ISLC.2002.1041161
