Title :
High performance long-wavelength QD diode lasers on GaAs substrates
Author :
Maleev, N.A. ; Kovsh, A.R. ; Zhukov, A.E. ; Mikhrin, S.S. ; Vasil´ev, A.P. ; Shernyakov, Yu.M. ; Livshits, D.A. ; Maximov, M.V. ; Ustinov, V.M. ; Alferov, Zh.I. ; Ledentsov, N.N. ; Bimberg, D.
Author_Institution :
A.F. Ioffe Physicotech. Inst., Acad. of Sci., St. Petersburg, Russia
Abstract :
Long-wavelength GaAs-based quantum dot laser diodes with external differential efficiency of 84...88% combined with low internal loss and characteristic temperature of 150 K are realized.
Keywords :
Debye temperature; III-V semiconductors; gallium arsenide; indium compounds; optical losses; quantum dot lasers; 150 K; 84 to 88 percent; GaAs; GaAs substrates; InGaAs; characteristic temperature; external differential efficiency; long-wavelength GaAs-based quantum dot laser diodes; low internal loss; Degradation; Diode lasers; Gallium arsenide; Molecular beam epitaxial growth; Quantum dot lasers; Quantum well lasers; Surface emitting lasers; Temperature; Threshold current; Vertical cavity surface emitting lasers;
Conference_Titel :
Semiconductor Laser Conference, 2002. IEEE 18th International
Print_ISBN :
0-7803-7598-X
DOI :
10.1109/ISLC.2002.1041162
