Title :
Synthesis and electrical characteristic of P-type ZnO film on indium-tin-oxide glass substrate by ultrasonic spray pyrolysis
Author :
Chen, Jing ; Lei, Wei ; Li, Chi ; Zhang, Xiaboing ; Sun, Xiawei ; Ling, Bo
Author_Institution :
Display R&D center, Southeast Univ., Nanjing
Abstract :
This paper has present a transparent diode device fabricated by p and n type ZnO films using ultrasonic spray pyrolysis (USP) method. The ammonia is added to the solution to provide the N-source and the P type ZnO can be obtained. I-V curve for the transparent diode can be measured and the turn-on voltage of the diode device is 2.3V.
Keywords :
II-VI semiconductors; diodes; pyrolysis; semiconductor diodes; semiconductor thin films; ultrasonic applications; wide band gap semiconductors; zinc compounds; ITO; ZnO-ITO; ammonia; indium-tin-oxide glass substrate; p-type film; semiconductor thin films; transparent diode device; ultrasonic spray pyrolysis; Electric variables; Glass; Nanoelectronics; Spraying; Substrates; Zinc oxide;
Conference_Titel :
Nanoelectronics Conference, 2008. INEC 2008. 2nd IEEE International
Conference_Location :
Shanghai
Print_ISBN :
978-1-4244-1572-4
Electronic_ISBN :
978-1-4244-1573-1
DOI :
10.1109/INEC.2008.4585502
