Title :
Bandwidth extension of voltage follower using DTMOS transistor
Author :
Garg, Shelly ; Chaudhary, Geetika ; Niranjan, Vandana ; Kumar, Ajit
Author_Institution :
Dept. of Electron. & Commun. Eng., Indira Gandhi Delhi Tech. Univ. for Women, New Delhi, India
Abstract :
In this paper, we have proposed a new approach to improve the bandwidth of unity gain voltage follower. This approach is based on using a dynamic threshold MOS transistor (DTMOS). The bandwidth of the proposed voltage follower has been enhanced by a factor of nearly 2.5. Use of DTMOS transistor also improves the input signal range of the proposed voltage follower. The proposed and conventional circuits have been mapped on to the 180 nm CMOS technology. Simulations at low supply voltage of 1 Volt validate the proposed voltage follower cell. A squarer circuit designed using proposed follower also shows wideband operation as compared to its conventional version. Thus proposed voltage follower is promising for low voltage wideband applications.
Keywords :
CMOS integrated circuits; MOSFET; operational amplifiers; CMOS technology; DTMOS transistor; bandwidth extension improvement; dynamic threshold MOS transistor; input signal range improvement; low supply voltage; low voltage wideband operation applications; size 180 nm; squarer circuit; unity gain voltage follower cell; voltage 1 V; Bandwidth; Frequency response; Logic gates; Low voltage; MOSFET; Threshold voltage; Dynamic threshold MOS Transistor; analog integrated circuits; bandwidth; low voltage; voltage follower;
Conference_Titel :
Computational Intelligence on Power, Energy and Controls with their impact on Humanity (CIPECH), 2014 Innovative Applications of
Conference_Location :
Ghaziabad
DOI :
10.1109/CIPECH.2014.7018211