Title :
Numerical predictions of p-channel SOI LIGBT electrical characteristics
Author :
Funaki, Hideyuki ; Nakagawa, Akio
Author_Institution :
Res. & Dev. Center, Toshiba Corp., Kawasaki, Japan
Abstract :
We have, for the first time, numerically investigated the electrical characteristics including breakdown voltage of the p-channel SOI lateral IGBTs (LIGBTs). It was found that the impurity dose of the n-drift layer for the SOI double Resurf structure can be increased without lowering the breakdown voltage, and that the on-resistance and switching characteristics of 250 V p-channel IGBTs on SOI are sufficiently good and almost comparable to those of n-channel IGBTs due to the effects of SOI-Resurf
Keywords :
electric breakdown; insulated gate bipolar transistors; power integrated circuits; power semiconductor switches; power transistors; silicon-on-insulator; 250 V; SOI double Resurf structure; Si; breakdown voltage; electrical characteristics; impurity dose; lateral IGBT; n-drift layer; numerical predictions; on-resistance; p-channel SOI LIGBT; switching characteristics; Conductivity; Driver circuits; Electric resistance; Electric variables; Impurities; Insulated gate bipolar transistors; Power integrated circuits; Research and development; Switching circuits; Voltage;
Conference_Titel :
Power Semiconductor Devices and ICs, 1995. ISPSD '95., Proceedings of the 7th International Symposium on
Conference_Location :
Yokohama
Print_ISBN :
0-7803-2618-0
DOI :
10.1109/ISPSD.1995.515063
