Numerical predictions of p-channel SOI LIGBT electrical characteristics

Author

Funaki, Hideyuki ; Nakagawa, Akio

Author_Institution

Res. & Dev. Center, Toshiba Corp., Kawasaki, Japan

fYear

1995

fDate

23-25 May 1995

Firstpage

350

Lastpage

353

Abstract

We have, for the first time, numerically investigated the electrical characteristics including breakdown voltage of the p-channel SOI lateral IGBTs (LIGBTs). It was found that the impurity dose of the n-drift layer for the SOI double Resurf structure can be increased without lowering the breakdown voltage, and that the on-resistance and switching characteristics of 250 V p-channel IGBTs on SOI are sufficiently good and almost comparable to those of n-channel IGBTs due to the effects of SOI-Resurf

Keywords

electric breakdown; insulated gate bipolar transistors; power integrated circuits; power semiconductor switches; power transistors; silicon-on-insulator; 250 V; SOI double Resurf structure; Si; breakdown voltage; electrical characteristics; impurity dose; lateral IGBT; n-drift layer; numerical predictions; on-resistance; p-channel SOI LIGBT; switching characteristics; Conductivity; Driver circuits; Electric resistance; Electric variables; Impurities; Insulated gate bipolar transistors; Power integrated circuits; Research and development; Switching circuits; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices and ICs, 1995. ISPSD '95., Proceedings of the 7th International Symposium on

Conference_Location

Yokohama

ISSN

1063-6854

Print_ISBN

0-7803-2618-0

Type

conf

DOI

10.1109/ISPSD.1995.515063

Filename

515063