Title : 
Testing nanometer digital integrated circuits: myths, reality and the road ahead
         
        
            Author : 
Blanton, Shawn ; Mitra, Subhasish
         
        
            Author_Institution : 
Carnegie Mellon Univ., Pittsburgh, PA, USA
         
        
        
        
        
        
            Abstract : 
High-test quality plays a central role in the development of successful products used for building robust computing and communication systems. Hence, high-test quality enablers are rapidly becoming "features", just like performance, power-consumption and die size. This tutorial includes in-depth discussions on two major test topics that are essential for designs manufactured in nanometer technologies: test compression and diagnosis. Test compression techniques enable orders of magnitude improvement (reduction) in test cost and pave the path for successful implementation of built-in-self-test features. Ensuring products yield with sufficient quality also requires techniques for identifying and characterizing defects. This tutorial describes state-of-the-art techniques for performing defect diagnosis and how such techniques are key in enabling high-yielding and high-quality products. Supporting data from actual designs and manufacturing processes are presented.
         
        
            Keywords : 
built-in self test; fault diagnosis; integrated circuit testing; integrated circuit yield; logic testing; nanoelectronics; built-in-self-test features; defect diagnosis; high-test quality; magnitude improvement; manufacturing processes; nanometer digital integrated circuit testing; nanometer technology; test compression; test cost reduction; Automatic testing; Circuit testing; Digital integrated circuits; Integrated circuit testing; Manufacturing; Micromechanical devices; Roads; Robustness; System testing; Very large scale integration;
         
        
        
        
            Conference_Titel : 
VLSI Design, 2005. 18th International Conference on
         
        
        
            Print_ISBN : 
0-7695-2264-5
         
        
        
            DOI : 
10.1109/ICVD.2005.162