Title :
On-wafer power measurement method using a new RF probe card
Author :
Maeda, Masahiro ; Nakamura, Morio ; Ota, Yorito ; Ishikawa, O.
Author_Institution :
Semicond. Res. Center, Matsushita Electr. Ind. Co. Ltd., Osaka, Japan
Abstract :
A novel RF probe card, which incorporates improved probe heads, has been developed for on-wafer power measurement of microwave devices. By using this probe card, output power (Pout) and power-added efficiency (PAE) of power FETs have been successfully measured at 950 MHz. The RF properties of on-wafer FETs have shown good correlation with those of packaged FETs. Typical Pout and PAE deviations have been only 0.5 dB and 3% respectively, at a saturation output power of around 1.3 W
Keywords :
UHF field effect transistors; UHF integrated circuits; UHF measurement; integrated circuit testing; power field effect transistors; power measurement; probes; semiconductor device testing; 1.3 W; 950 MHz to 1.9 GHz; RF probe card; UHF FET; UHF ICs; onwafer power measurement method; power FETs; power-added efficiency; probe heads; Blades; Ceramics; FETs; Impedance; Microwave devices; Needles; Power generation; Power measurement; Probes; Radio frequency;
Conference_Titel :
Power Semiconductor Devices and ICs, 1995. ISPSD '95., Proceedings of the 7th International Symposium on
Conference_Location :
Yokohama
Print_ISBN :
0-7803-2618-0
DOI :
10.1109/ISPSD.1995.515065
