Title :
Effects of recovery characteristics of diodes on the performances of snubber and PFC circuits
Author :
Shinohara, S. ; Kobayashi, H. ; Saito, R. ; Hasegawa, Y.
Author_Institution :
Res. & Dev. Div., Origin Electr. Co. Ltd., Tokyo, Japan
Abstract :
A high voltage soft and fast recovery diode with a tailored lifetime profile is presented. For the diode, tπ and ta are determined by the lifetime in the i region (τB) and the lifetime near the P+-i junction (τJ), respectively. By controlling the ratio (C2 τJ/C1τB), desired values of softness factor can be obtained. In a snubber and a PFC (Power Factor Correction) circuit, the diode demonstrates the lowest switching noises and losses compared to conventional diodes
Keywords :
carrier lifetime; losses; power factor correction; power semiconductor diodes; power semiconductor switches; semiconductor device noise; snubbers; PFC circuits; losses; power factor correction; recovery characteristics; snubber circuits; soft recovery; softness factor; switching noises; tailored lifetime profile; Circuit noise; Circuit testing; Current density; Power systems; Protons; Schottky diodes; Semiconductor device noise; Semiconductor diodes; Snubbers; Voltage;
Conference_Titel :
Power Semiconductor Devices and ICs, 1995. ISPSD '95., Proceedings of the 7th International Symposium on
Conference_Location :
Yokohama
Print_ISBN :
0-7803-2618-0
DOI :
10.1109/ISPSD.1995.515069
