Effects of recovery characteristics of diodes on the performances of snubber and PFC circuits

Author

Shinohara, S. ; Kobayashi, H. ; Saito, R. ; Hasegawa, Y.

Author_Institution

Res. & Dev. Div., Origin Electr. Co. Ltd., Tokyo, Japan

fYear

1995

fDate

23-25 May 1995

Firstpage

391

Lastpage

395

Abstract

A high voltage soft and fast recovery diode with a tailored lifetime profile is presented. For the diode, t_π and t_a are determined by the lifetime in the i region (τ_B) and the lifetime near the P⁺-i junction (τ_J), respectively. By controlling the ratio (C₂τ_J/C₁τ_B), desired values of softness factor can be obtained. In a snubber and a PFC (Power Factor Correction) circuit, the diode demonstrates the lowest switching noises and losses compared to conventional diodes

Keywords

carrier lifetime; losses; power factor correction; power semiconductor diodes; power semiconductor switches; semiconductor device noise; snubbers; PFC circuits; losses; power factor correction; recovery characteristics; snubber circuits; soft recovery; softness factor; switching noises; tailored lifetime profile; Circuit noise; Circuit testing; Current density; Power systems; Protons; Schottky diodes; Semiconductor device noise; Semiconductor diodes; Snubbers; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices and ICs, 1995. ISPSD '95., Proceedings of the 7th International Symposium on

Conference_Location

Yokohama

ISSN

1063-6854

Print_ISBN

0-7803-2618-0

Type

conf

DOI

10.1109/ISPSD.1995.515069

Filename

515069