Analysis of diode recovery phenomena using transient analysis method for semiconductor devices coupled with external circuit

Author

Mishima, A. ; Kimura, S. ; Mori, M. ; Kozaka, H.

Author_Institution

Power & Ind. Syst. R&D Div., Hitachi Ltd., Ibaraki, Japan

fYear

1995

fDate

23-25 May 1995

Firstpage

396

Lastpage

399

Abstract

Relationships between peak voltage value Vp and forward current flowing interval Δt during the diode reverse recovery process were investigated experimentally and by a device simulation technique. Vp increases with decreasing Δt and becomes a maximum at Δt~1.5 μs. This result shows that the fast switching process in invertor circuits may possibly give a high voltage stress for the diodes

Keywords

invertors; power semiconductor diodes; power semiconductor switches; semiconductor device models; transient analysis; device simulation technique; diode recovery phenomena; external circuit coupling; forward current flowing interval; invertor circuits; peak voltage value; power semiconductor devices; reverse recovery process; switching process; transient analysis method; voltage stress; Coupling circuits; Electrodes; Equations; Insulated gate bipolar transistors; Power semiconductor switches; Semiconductor devices; Semiconductor diodes; Switching circuits; Transient analysis; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices and ICs, 1995. ISPSD '95., Proceedings of the 7th International Symposium on

Conference_Location

Yokohama

ISSN

1063-6854

Print_ISBN

0-7803-2618-0

Type

conf

DOI

10.1109/ISPSD.1995.515070

Filename

515070