Title :
Analysis of diode recovery phenomena using transient analysis method for semiconductor devices coupled with external circuit
Author :
Mishima, A. ; Kimura, S. ; Mori, M. ; Kozaka, H.
Author_Institution :
Power & Ind. Syst. R&D Div., Hitachi Ltd., Ibaraki, Japan
Abstract :
Relationships between peak voltage value Vp and forward current flowing interval Δt during the diode reverse recovery process were investigated experimentally and by a device simulation technique. Vp increases with decreasing Δt and becomes a maximum at Δt~1.5 μs. This result shows that the fast switching process in invertor circuits may possibly give a high voltage stress for the diodes
Keywords :
invertors; power semiconductor diodes; power semiconductor switches; semiconductor device models; transient analysis; device simulation technique; diode recovery phenomena; external circuit coupling; forward current flowing interval; invertor circuits; peak voltage value; power semiconductor devices; reverse recovery process; switching process; transient analysis method; voltage stress; Coupling circuits; Electrodes; Equations; Insulated gate bipolar transistors; Power semiconductor switches; Semiconductor devices; Semiconductor diodes; Switching circuits; Transient analysis; Voltage;
Conference_Titel :
Power Semiconductor Devices and ICs, 1995. ISPSD '95., Proceedings of the 7th International Symposium on
Conference_Location :
Yokohama
Print_ISBN :
0-7803-2618-0
DOI :
10.1109/ISPSD.1995.515070
