Title :
Design and realization of high-power distributed-feedback lasers emitting at 860 nm
Author :
Wenzel, H. ; Braun, M. ; Fricke, J. ; Klehr, A. ; Knauer, A. ; Ressel, P. ; Erbert, G. ; Trankle, G.
Author_Institution :
Ferdinand-Braun-Inst. fur Hochsfrequenstech., Berlin, Germany
Abstract :
Summary form only given. AlGaAs/InGaAsP ridge-waveguide distributed-feedback lasers emitting at 860 nm a continuous-wave output power of more than 400 mW at 25°C are reported.
Keywords :
III-V semiconductors; MOCVD; aluminium compounds; distributed feedback lasers; gallium arsenide; indium compounds; infrared sources; laser transitions; ridge waveguides; semiconductor lasers; vapour phase epitaxial growth; waveguide lasers; 25 degC; 400 mW; 860 nm; AlGaAs-InGaAsP; AlGaAs/InGaAsP ridge-waveguide distributed-feedback lasers; CW lasing; MOVPE growth; continuous-wave output power; high-power distributed-feedback lasers; Distributed feedback devices; Holography; Laser feedback; Laser modes; Optical design; Power generation; Power lasers; Surface emitting lasers; Temperature; Threshold current;
Conference_Titel :
Semiconductor Laser Conference, 2002. IEEE 18th International
Print_ISBN :
0-7803-7598-X
DOI :
10.1109/ISLC.2002.1041170
