Comparison of experimental losses among six different topologies for a 1.6 kW boost converter, using IGBTs

Author

Canesin, Carlos A. ; Barbi, Ivo

Author_Institution

Paulista State Univ., Brazil

Volume

2

fYear

1995

fDate

18-22 Jun 1995

Firstpage

1265

Abstract

This paper presents a comparative analysis of experimental losses between a new ZCS-PWM boost converter and five different boost topologies, using IGBTs, rated at 1.6 kW and operating at 20 kHz. The advantages of the new ZCS-PWM technique employing IGBTs are presented. This new ZCS operation can reduce the average total power dissipation in the devices, practically by half, when compared with the hard-switching method. This new ZCS-PWM boost converter is suitable for high power applications using IGBTs in power factor correction. The principle of operation, experimental results, and comparative analysis of the new ZCS-PWM boost converter are also provided

Keywords

DC-DC power convertors; PWM power convertors; insulated gate bipolar transistors; losses; power factor correction; power semiconductor switches; switching circuits; 1.6 kW; 20 kHz; IGBT; ZCS-PWM boost converter; boost converter; boost topologies; high power applications; losses; power factor correction; total power dissipation reduction; zero current switching; Frequency conversion; Insulated gate bipolar transistors; Power dissipation; Resonance; Switches; Switching converters; Switching loss; Topology; Zero current switching; Zero voltage switching;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Electronics Specialists Conference, 1995. PESC '95 Record., 26th Annual IEEE

Conference_Location

Atlanta, GA

Print_ISBN

0-7803-2730-6

Type

conf

DOI

10.1109/PESC.1995.474976

Filename

474976