• DocumentCode
    2366734
  • Title

    An IGBT gate drive ASIC with 3 A/12.5 A CMOS output stages

  • Author

    Biber, Alice ; Kuratli, Christoph ; Huang, Qiuting ; Felber, Norbert ; Thiemann, Uwe

  • Author_Institution
    Integrated Syst. Lab., Swiss Federal Inst. of Technol., Zurich, Switzerland
  • fYear
    1995
  • fDate
    23-25 May 1995
  • Firstpage
    411
  • Lastpage
    415
  • Abstract
    For effective operation of an IGBT, intelligent gate drive circuitry is indispensable. A complete gate drive application specific integrated circuit (ASIC) with 3 A and 12 A output stages and an intelligent controller has been developed, integrated and tested. Protection circuits such as a voltage supply monitor or power up protection expand the areas of application. Various input circuits allow communication via transformer, opto-couplers and fiber-optics which further contribute to the flexibility of this ASIC. Other important functions are the master/slave configuration and different driving stages which allow use in a variety of different systems. Combining these features into an ASIC reduces the number of external components necessary, thus creating an attractive alternative to discrete gate drives
  • Keywords
    BiCMOS integrated circuits; driver circuits; insulated gate bipolar transistors; intelligent control; mixed analogue-digital integrated circuits; power integrated circuits; power semiconductor switches; power transistors; protection; 12.5 A; 3 A; CMOS output stages; IGBT gate drive ASIC; application specific integrated circuit; intelligent controller; intelligent gate drive circuitry; master/slave configuration; power up protection; protection circuits; voltage supply monitor; Application specific integrated circuits; Circuit testing; Communication system control; Flexible printed circuits; Insulated gate bipolar transistors; Integrated circuit testing; Monitoring; Optical fiber communication; Power supplies; Power system protection;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Power Semiconductor Devices and ICs, 1995. ISPSD '95., Proceedings of the 7th International Symposium on
  • Conference_Location
    Yokohama
  • ISSN
    1063-6854
  • Print_ISBN
    0-7803-2618-0
  • Type

    conf

  • DOI
    10.1109/ISPSD.1995.515073
  • Filename
    515073