Title :
Preparation of nano-structured InGaAs thin film by molecular beam epitaxy
Author :
Yanping Yao ; Chunling Liu ; Zhongliang Qiao ; Mei Li ; Xin Gao ; Baoxue Bo
Author_Institution :
State Key Lab. of High Power Semicond. Lasers, Changchun Univ. of Sci. & Technol., Changchun
Abstract :
The nano-structured InGaAs films have been prepared by molecular beam epitaxy at different substrate temperature. The substrate temperature was varied from 400degC to 20degC. The samples were characterized by X-ray diffraction and absorption spectra. The results show that the grain size of InGaAs films and the bandgap width increase with increasing substrate temperature. The as-deposited nano-structured InGaAs films have been passivated using hydrogen plasma. The influence of hydrogenation on these InGaAs films has been studied by Fourier transform infrared absorption spectroscopy. These data show the presence of various hydrogen bondings in InGaAs samples prepared at 200degC and 20degC. And the effect of the post hydrogen passivation increases the dark resistivity and photo sensitivity. These results demonstrate the post hydrogen passivation reduces the defects in the films and improves properties of nano-structured InGaAs film.
Keywords :
Fourier transform spectra; III-V semiconductors; X-ray diffraction; dark conductivity; energy gap; gallium arsenide; grain size; hydrogen bonds; hydrogenation; indium compounds; infrared spectra; molecular beam epitaxial growth; nanostructured materials; nanotechnology; passivation; plasma materials processing; semiconductor growth; semiconductor thin films; Fourier transform infrared absorption spectroscopy; InGaAs; InGaAs thin film; X-ray diffraction; absorption spectra; bandgap; dark resistivity; grain size; hydrogen bondings; hydrogen plasma; hydrogenation; molecular beam epitaxy; nanostructured film; passivation; photosensitivity; temperature 20 degC to 400 degC; Electromagnetic wave absorption; Hydrogen; Indium gallium arsenide; Infrared spectra; Molecular beam epitaxial growth; Passivation; Plasma temperature; Substrates; Transistors; X-ray diffraction;
Conference_Titel :
Nanoelectronics Conference, 2008. INEC 2008. 2nd IEEE International
Conference_Location :
Shanghai
Print_ISBN :
978-1-4244-1572-4
Electronic_ISBN :
978-1-4244-1573-1
DOI :
10.1109/INEC.2008.4585516
