• DocumentCode
    2366807
  • Title

    Antireflective sub-wavelength gratings fabricated by UV-NIL

  • Author

    Li, Miaoli ; Wang, Qingkang ; Shen, Jun ; Liu, Yanbo ; Zhu, Zhaoying ; Wan, Yongzhong ; Niu, Xiaoming

  • Author_Institution
    Shanghai Nanotechnol. Promotion Center, Shanghai
  • fYear
    2008
  • fDate
    24-27 March 2008
  • Firstpage
    415
  • Lastpage
    421
  • Abstract
    Sub-wavelength gratings (SWGs) have been widely used in many fields since the structure has the function of antireflection and increase the light transmittance. Many researchers are fabricating SWGs on the glass substrate hoping that it can be used in solar cells, display or light emit diodes (LEDs). Nanoimprint is an emerging lithographic technology that promises high resolution, high throughput, and low cost patterning of nanostructures. In this paper, an antireflective SWGs on a quartz substrate with transparent resist by UV nanoimprint lithography (NIL) is fabricated. The transmittance at the wavelengths from 1000 nm to 2000 nm were measured and compared with the same substrate without SWGs pattern. The results show that the SWGs pattern increases the transmittance by about 1.5%.
  • Keywords
    antireflection coatings; atomic force microscopy; diffraction gratings; infrared spectra; light transmission; nanolithography; photoresists; quartz; spin coating; ultraviolet lithography; AFM; SiO2; UV-cured transparent resist deposition; UV-nanoimprint lithography; antireflective sub-wavelength gratings; light transmittance; quartz substrate; replication structure; rigid quartz stamp; spin coating technique; wavelength 1000 nm to 2000 nm; Costs; Displays; Glass; Gratings; Light emitting diodes; Nanostructures; Photovoltaic cells; Reluctance generators; Resists; Throughput; Sub-wavelength gratings (SWGs); UVNanoimprint lithography (UV-NIL); photorisist; stamp;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Nanoelectronics Conference, 2008. INEC 2008. 2nd IEEE International
  • Conference_Location
    Shanghai
  • Print_ISBN
    978-1-4244-1572-4
  • Electronic_ISBN
    978-1-4244-1573-1
  • Type

    conf

  • DOI
    10.1109/INEC.2008.4585518
  • Filename
    4585518