Oxygen-contamination-free ultra-low-resistance silicided contact technology for high performance power devices

Author

Ino, K. ; Yamada, K. ; Jong, G.S. ; Ohmi, T.

Author_Institution

Dept. of Electron. Eng., Tohoku Univ., Sendai, Japan

fYear

1995

fDate

23-25 May 1995

Firstpage

434

Lastpage

437

Abstract

We have developed an ultra-low contact resistance metallization process employing oxygen-contamination-free silicidation technology combined with ion beam mixing technique. Suppression of native-oxide layer formation on the metal surface by use of an in situ formed Si encapsulation layer has resulted in ultra-low metal-to-silicon contact resistances of 3.3×10^-9 Ω·cm² and 7.5×10^-9 Ω·cm² with Ta silicided contacts for n⁺-Si and p⁺-Si, respectively

Keywords

contact resistance; encapsulation; ion beam mixing; power semiconductor devices; semiconductor device metallisation; tantalum compounds; O-contamination-free silicided contact; Si encapsulation layer; Ta silicided contacts; TaSi-Si; contact resistance; high performance power devices; ion beam mixing technique; metallization process; n⁺-Si; native-oxide layer formation suppression; p⁺-Si; ultra-low-resistance silicided contact technology; Annealing; Argon; Encapsulation; Ion beams; Metallization; Power engineering and energy; Semiconductor films; Silicides; Silicon; Surface resistance;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices and ICs, 1995. ISPSD '95., Proceedings of the 7th International Symposium on

Conference_Location

Yokohama

ISSN

1063-6854

Print_ISBN

0-7803-2618-0

Type

conf

DOI

10.1109/ISPSD.1995.515077

Filename

515077