• DocumentCode
    2366843
  • Title

    Fabrication of silver nanowires in situ in Si chip based on a novel electrochemical method

  • Author

    Liu, Jia ; Fu, Yunyi ; Guo, Ao ; Wang, Chuan ; Huang, Ru ; Zhang, Xiang

  • Author_Institution
    Inst. of Microelectron., Peking Univ., Beijing
  • fYear
    2008
  • fDate
    24-27 March 2008
  • Firstpage
    424
  • Lastpage
    427
  • Abstract
    In this paper, we report a novel electrochemical deposition (ECD) method to fabricate silver nanoscale wires and dendrites. We carry out the electrochemical deposition (ECD) process on a small piece of Si wafer. On its surface, there are micro-scale predefined silver electrodes. We use organic solution (N,N-dimethylformamide (DMF)) instead of metal salt solution as the electrolyte. Usually the fractal structures can be formed in the electrochemical deposition (ECD) process. When an external resistor is introduced in the ECD circuit, instead of fractal structures, silver nanoscale wires and dendrites can be obtained between two electrodes in situ in the Si chip. The diameters of the silver nanowires are about 40-200 nm and the electric properties of the silver nanowire with a diameter about 100 nm have been measured. We have proposed a possible formation mechanism for these silver nanoscale wires and dendrites.
  • Keywords
    dendrites; electrochemistry; electrodeposition; fractals; nanowires; silicon; silver; Ag; N,N-dimethylformamide; Si; dendrites fabrication; electrochemical deposition method; electrolyte; external resistor; formation mechanism; fractal structures; micro-scale predefined silver electrodes; organic solution; silicon wafer; silver nanowires fabrication; Circuits; Electric variables measurement; Electrodes; Fabrication; Fractals; Nanostructures; Nanowires; Resistors; Silver; Wires;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Nanoelectronics Conference, 2008. INEC 2008. 2nd IEEE International
  • Conference_Location
    Shanghai
  • Print_ISBN
    978-1-4244-1572-4
  • Electronic_ISBN
    978-1-4244-1573-1
  • Type

    conf

  • DOI
    10.1109/INEC.2008.4585520
  • Filename
    4585520