Synthesis of R-SiC nanowires via catalyst-free chemical vapour growth route

Rhombohedral-silicon carbide nanowires were synthesized using chemical vapour growth approach, which was conducted in a vacuum system. In the process of synthesizing SiC nanowires, activated carbon powder and Si wafer were used as source material. Heating temperature (1200-1350degC) and dwelling time (1-4 h) were systematically investigated. The morphology and chemical composition of the sample were evaluated using field-emission scanning-electron microscopy with energy dispersive X-ray spectroscopy, X-ray diffractometer spectroscopy, transmission electron microscopy, and Raman spectroscopy. The nanowires with diameter and length in the range of 10-30 nm and lengths up to several ten of micrometers, respectively, were obtained.