Title :
Over 1000 V n-ch LDMOSFET and p-ch LIGBT with JI RESURF structure and multiple floating field plate
Author :
Terashima, Tomohide ; Yamashita, Junichi ; Yamada, Tomihisa
Author_Institution :
Mitsubishi Electr. Corp., Itami, Japan
Abstract :
A new 1500 V n-ch LDMOSFET and a new 1200 V p-ch LIGBT using JI/RESURF structures with a new surface electric field relaxation structure, MFFP, and n+/n-buried layer are described. On resistance of the n-ch LDMOSFET is about 700 Ω and it has 800 V/100 mA switching capabilities. The p-ch LIGBT has a p-LDD structure. On resistance of this device is 1600 Ω and that value may be reduced to one third compared to a p-ch LDMOSFET of same chip size
Keywords :
field effect transistor switches; insulated gate bipolar transistors; power MOSFET; power field effect transistors; power semiconductor switches; 100 mA; 1600 ohm; 700 ohm; 800 to 1500 V; JI RESURF structure; lateral DMOSFET; lateral IGBT; multiple floating field plate; n+/n-buried layer; n-channel LDMOSFET; on resistance; p-LDD structure; p-channel LIGBT; power transistors; surface electric field relaxation structure; switching capabilities; Conductivity; Epitaxial layers; Impact ionization; Impurities; MOSFET circuits; Structural engineering; Substrates; Wiring;
Conference_Titel :
Power Semiconductor Devices and ICs, 1995. ISPSD '95., Proceedings of the 7th International Symposium on
Conference_Location :
Yokohama
Print_ISBN :
0-7803-2618-0
DOI :
10.1109/ISPSD.1995.515081
