Abstract :
The following topics are dealt with: semiconductor diodes; IGBT; RF power and modeling; low voltage Si MOS; diamond devices; SiC unipolar devices; SiC bipolar devices; superjunction devices; GaN devices; power semiconductor devices and integration technology
Keywords :
III-V semiconductors; diamond; gallium compounds; insulated gate bipolar transistors; power HEMT; power MOSFET; power integrated circuits; power semiconductor devices; power semiconductor diodes; silicon; silicon compounds; wide band gap semiconductors; GaN; GaN devices; IGBT; RF modeling; RF power; SiC; SiC bipolar devices; SiC unipolar devices; diamond devices; integration technology; low voltage silicon MOS; power integrated circuits; power semiconductor devices; semiconductor diodes; superjunction devices;
Conference_Titel :
Power Semiconductor Devices and IC's, 2006. ISPSD 2006. IEEE International Symposium on
Conference_Location :
Naples
Print_ISBN :
0-7803-9714-2
DOI :
10.1109/ISPSD.2006.1666046
