DocumentCode :
2366943
Title :
A 30 V high-speed thin-film SOI power MOSFET having tungsten polycide gate
Author :
Matsumoto, Satoshi ; Kim, II-Jung ; Sakai, Tatsuo ; Fukumitsu, Takao ; Yachi, Toshiaki
Author_Institution :
NTT Interdisciplinary Res. Labs, Tokyo, Japan
fYear :
1995
fDate :
23-25 May 1995
Firstpage :
466
Lastpage :
471
Abstract :
A 30 V high-speed thin-film SOI power MOSFET with a tungsten polycide gate has been fabricated with a practical size. The gate resistance is about one third that of one with a conventional poly-Si gate. The experimental device had a breakdown voltage of 34 V and a specific on-resistance of 72 mΩ·mm2
Keywords :
power MOSFET; silicon-on-insulator; thin film transistors; 30 V; WSi; breakdown voltage; high-speed thin-film SOI power MOSFET; specific on-resistance; tungsten polycide gate; Annealing; Fabrication; MOSFET circuits; Parasitic capacitance; Power MOSFET; Silicon; Substrates; Thin film devices; Transistors; Tungsten;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Power Semiconductor Devices and ICs, 1995. ISPSD '95., Proceedings of the 7th International Symposium on
Conference_Location :
Yokohama
ISSN :
1063-6854
Print_ISBN :
0-7803-2618-0
Type :
conf
DOI :
10.1109/ISPSD.1995.515083
Filename :
515083
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2366943
بازگشت