DocumentCode :
2366951
Title :
Effects of different annealing treatments on soft magnetic properties of Finemet alloy
Author :
Long, Lance ; Yan, Bin ; Guan, L.-d. ; Yang, Songping ; Chen, Zi-Hau
Author_Institution :
Shanghai Key Lab. of D&A for Metal-Functional Mater., Shanghai
fYear :
2008
fDate :
24-27 March 2008
Firstpage :
458
Lastpage :
461
Abstract :
Amorphous ribbon of Finemet alloy was obtained by rapid quenching from the melt spinning technique. Normal heat treatment and longitudinal magnetic field heat treatment methods were applied to anneal the Finemet amorphous ribbon. Microstructures of the annealed ribbons were detected by XRD. XRD results showed that nanocrystalline alpha-Fe(Si) phase formed in the amorphous matrix after both annealing treatments, resulting in the nanocrystalline / amorphous two-phase structure. Soft magnetic properties of the annealed ribbons were tested by TPS-200SA Soft Exchange Tester. It was found that soft magnetic properties were greatly improved by both annealing treatment methods, especially after the longitudinal magnetic field heat treatment, the hysteresis loop was transformed to near-rectangle shape, with the magnetic permeability mu greatly improved.
Keywords :
X-ray diffraction; amorphous magnetic materials; annealing; boron alloys; copper alloys; ferromagnetic materials; iron alloys; magnetic hysteresis; magnetic permeability; nanostructured materials; niobium alloys; quenching (thermal); silicon alloys; soft magnetic materials; Fe73.5CuNb3Si13.5B9; Finemet alloy; XRD; amorphous matrix; amorphous ribbon; amorphous two-phase structure; annealing treatments; heat treatment; hysteresis loop; magnetic permeability; melt spinning technique; microstructures; nanocrystalline phase; rapid quenching; soft magnetic properties; Amorphous materials; Annealing; Heat treatment; Magnetic fields; Magnetic hysteresis; Magnetic properties; Microstructure; Spinning; Testing; X-ray scattering;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Nanoelectronics Conference, 2008. INEC 2008. 2nd IEEE International
Conference_Location :
Shanghai
Print_ISBN :
978-1-4244-1572-4
Electronic_ISBN :
978-1-4244-1573-1
Type :
conf
DOI :
10.1109/INEC.2008.4585527
Filename :
4585527
Link To Document :
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