Title :
Study of gated pnp as an ESD protection device for mixed-voltage and hot-pluggable circuit applications
Author :
Minh Toug ; Gauthier, Robert ; Gross, Vaughn
Author_Institution :
Microelectron. Div., IBM Corp., Essex Junction, VT, USA
Abstract :
The ESD protection results of lateral-gated PNP transistors for various circuit applications are presented. Human body model (HBM) ESD performance was found to depend on the I/O scheme while wafer-level HBM ESD protection varied from 6.6 kV to 7.6 kV for hot-plug application and mixed-voltage application, respectively.
Keywords :
electrostatic discharge; field effect transistors; protection; 6.6 to 7.6 kV; ESD protection device; I/O circuit; hot-pluggable circuit; human body model; lateral-gated PNP transistor; mixed-voltage circuit; Electrostatic discharges; FETs; Protection;
Conference_Titel :
Electrical Overstress/Electrostatic Discharge Symposium, 1996. Proceedings
Print_ISBN :
1-878303-69-4
DOI :
10.1109/EOSESD.1996.865154
