Title :
The bidirectional power NMOS-a new concept in battery disconnect switching
Author :
Williams, Richard K. ; Blattner, Robert ; Shekar, M.S. ; Butani, Ajay ; Darwish, Mohammed
Author_Institution :
Siliconix Inc., Santa Clara, CA, USA
Abstract :
A new bidirectionally blocking, bidirectionally conducting switch for computer battery power management using a unique symmetric power NMOS is described. Symmetric drift regions for off-state electric field relief, body doping profile optimization for low-body-effect low on-state losses, and a high parasitic bipolar sustaining voltage for controlled turn-on transients are detailed. An SO-16 battery disconnect switch (BDS) having a 60-mΩ 4-A rating with an 18-V sustaining voltage and 35-V breakdown is shown to outperform comparable area back-to-back configured discrete DMOS AC switches
Keywords :
computer power supplies; field effect transistor switches; power MOSFET; power field effect transistors; power semiconductor switches; 18 to 35 V; 4 A; 60 mohm; SO-16 battery disconnect switch; back-to-back configured discrete AC switch; bidirectionally blocking switch; breakdown; computer battery power management; doping profile; off-state electric field relief; on-state losses; parasitic bipolar sustaining voltage; symmetric power NMOS; turn-on transients; Batteries; Board of Directors; Breakdown voltage; Diodes; Doping profiles; Immune system; MOSFET circuits; Power MOSFET; Power systems; Switches;
Conference_Titel :
Power Semiconductor Devices and ICs, 1995. ISPSD '95., Proceedings of the 7th International Symposium on
Conference_Location :
Yokohama
Print_ISBN :
0-7803-2618-0
DOI :
10.1109/ISPSD.1995.515085
