Title :
High-efficiency performance of microwave power 4H-SiC amplifiers
Author :
Shin, M.W. ; Kordas, T.J. ; Trew, R.J.
Author_Institution :
Dept. of Electr. Eng. & Appl. Phys., Case Western Reserve Univ., Cleveland, OH, USA
Abstract :
The high frequency performance of a 4H-SiC MESFET is examined using an advanced harmonic-balance device/circuit simulator combined with the two-dimensional device simulator PISCES-IIB. Very good agreement with experimental measurements is achieved. Circuit and device optimizations are discussed. An improved device structure with a maximum power added efficiency approaching the theoretical limit is predicted
Keywords :
harmonic analysis; microwave field effect transistors; microwave power transistors; power MESFET; power field effect transistors; semiconductor device models; semiconductor materials; silicon compounds; PISCES-IIB; SiC; device optimizations; device structure; harmonic-balance device/circuit simulator; maximum power added efficiency; microwave MESFET; two-dimensional device simulator; Circuit simulation; Conducting materials; Electrons; FETs; High power amplifiers; Microwave amplifiers; Power amplifiers; Radio frequency; Silicon carbide; Voltage;
Conference_Titel :
Power Semiconductor Devices and ICs, 1995. ISPSD '95., Proceedings of the 7th International Symposium on
Conference_Location :
Yokohama
Print_ISBN :
0-7803-2618-0
DOI :
10.1109/ISPSD.1995.515088
