DocumentCode :
2367036
Title :
Preparation of nano-structured LiMn2O4 thin films by electrostatic spray deposition
Author :
Wang, Zhou-Cheng ; Kim, Kwang-Bum
Author_Institution :
Dept. of Chem. & Biochem. Eng., Xiamen Univ., Xiamen
fYear :
2008
fDate :
24-27 March 2008
Firstpage :
470
Lastpage :
473
Abstract :
A novel fabrication technique has been used to prepare nano-structured LiMn2O4 thin films using electrostatic spray deposition (ESD) from suspensions containing LiMn2O4 fine particles. It is found that a mixture of acetylacetone and ethanol in a ratio of 1:1 by volume is a suitable suspension medium to disperse LiMn2O4 fine particles effectively and form colloidally stable suspension. The effects of the processing parameters, such as applied voltages, suspension flow rates and deposition times, on the surface morphology and microstructure of the thin films are examined with scanning electron microscopy (SEM). The results show that the deposited LiMn2O4 thin films are uniform, dense and well adhered to the substrates. Analysis of the crystal structure of the thin films using X-ray diffraction (XRD) indicates the deposited material as being spinel LiMn2O4, which is in fair agreement with the original fine particles.
Keywords :
X-ray diffraction; colloids; crystal microstructure; lithium compounds; nanostructured materials; nanotechnology; scanning electron microscopy; spray coatings; surface morphology; suspensions; thin films; ESD; LiMn2O4; SEM; X-ray diffraction; XRD; acetylacetone; colloids; crystal structure; electrostatic spray deposition; ethanol; microstructure; nanostructured thin films; scanning electron microscopy; surface morphology; suspension flow rates; Dispersion; Electrostatic discharge; Ethanol; Fabrication; Scanning electron microscopy; Spraying; Sputtering; Surface morphology; Suspensions; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Nanoelectronics Conference, 2008. INEC 2008. 2nd IEEE International
Conference_Location :
Shanghai
Print_ISBN :
978-1-4244-1572-4
Electronic_ISBN :
978-1-4244-1573-1
Type :
conf
DOI :
10.1109/INEC.2008.4585530
Filename :
4585530
Link To Document :
بازگشت