DocumentCode
2367074
Title
Mechanical stress dependence of power device electrical characteristics
Author
Tanaka, Hiroaki ; Hotta, Koji ; Kuwano, Satoshi ; Usui, Masanori ; Ishiko, Masayasu
Author_Institution
Toyota Motor Corp., Aichi
fYear
2006
fDate
4-8 June 2006
Firstpage
1
Lastpage
4
Abstract
This paper describes how mechanical stress affects the electrical characteristics of a power device, depending on the surface structure of the device or the device type. Experimental results show that devices in which the current flow direction is vertical to the substrate, such as trench structure devices, are affected the least by mechanical stress
Keywords
power semiconductor devices; semiconductor device testing; stress effects; current flow direction; electrical characteristics; mechanical stress dependence; power device; surface structure; trench structure devices; Capacitive sensors; Deformable models; Electric variables; Multichip modules; Piezoresistance; Silicon; Temperature dependence; Tensile stress; Thermal resistance; Thermal stresses;
fLanguage
English
Publisher
ieee
Conference_Titel
Power Semiconductor Devices and IC's, 2006. ISPSD 2006. IEEE International Symposium on
Conference_Location
Naples
Print_ISBN
0-7803-9714-2
Type
conf
DOI
10.1109/ISPSD.2006.1666056
Filename
1666056
Link To Document