Title :
Mechanical stress dependence of power device electrical characteristics
Author :
Tanaka, Hiroaki ; Hotta, Koji ; Kuwano, Satoshi ; Usui, Masanori ; Ishiko, Masayasu
Author_Institution :
Toyota Motor Corp., Aichi
Abstract :
This paper describes how mechanical stress affects the electrical characteristics of a power device, depending on the surface structure of the device or the device type. Experimental results show that devices in which the current flow direction is vertical to the substrate, such as trench structure devices, are affected the least by mechanical stress
Keywords :
power semiconductor devices; semiconductor device testing; stress effects; current flow direction; electrical characteristics; mechanical stress dependence; power device; surface structure; trench structure devices; Capacitive sensors; Deformable models; Electric variables; Multichip modules; Piezoresistance; Silicon; Temperature dependence; Tensile stress; Thermal resistance; Thermal stresses;
Conference_Titel :
Power Semiconductor Devices and IC's, 2006. ISPSD 2006. IEEE International Symposium on
Conference_Location :
Naples
Print_ISBN :
0-7803-9714-2
DOI :
10.1109/ISPSD.2006.1666056
