Title :
Theoretical Investigation of Silicon Limit Characteristics of IGBT
Author_Institution :
Semicond. Co., Toshiba Corp., Kawasaki
Abstract :
IGBTs have evolved rapidly as key power devices for high power application. The present paper theoretically investigates, for the first time, the silicon limit of IGBTs, and proposes a new trench gate IEGT/IGBT, realizing the theoretical limit. It is shown that almost one order of magnitude improvement in on-resistance will be expected. The author also proposes, for the first time, a theory to achieve extremely large short-circuit withstanding capability
Keywords :
elemental semiconductors; insulated gate bipolar transistors; silicon; IGBT device; Si; magnitude improvement; on-resistance; short circuit withstanding capability; silicon limit characteristics; trench gate; Charge carrier density; Charge carrier processes; Current density; Electrons; Equations; Insulated gate bipolar transistors; Iron; Semiconductor optical amplifiers; Silicon; Threshold voltage;
Conference_Titel :
Power Semiconductor Devices and IC's, 2006. ISPSD 2006. IEEE International Symposium on
Conference_Location :
Naples
Print_ISBN :
0-7803-9714-2
DOI :
10.1109/ISPSD.2006.1666057
