• DocumentCode
    2367104
  • Title

    Synthesis of self-assembled silicon nanowires with uniform small diameter

  • Author

    Chen, Y.W. ; Jiang, S.H. ; Liu, L.B. ; Shao, B.X. ; Rong, R.F. ; Gu, Z.G. ; Wang, R.C.

  • Author_Institution
    Dept. of Mater. Sci., Fudan Univ., Shanghai
  • fYear
    2008
  • fDate
    24-27 March 2008
  • Firstpage
    480
  • Lastpage
    484
  • Abstract
    Self-assembled silicon nanowires were synthesized with silicon monoxide as starting materials and argon as protection gas. The growth temperature was controlled at 480degC with the pressure at 2.8 MPa. Transmission electron microscopy (TEM) showed that the diameter of the silicon nanowires distributed form 5 run to 7 nm. In the high-resolution TEM image, the crystalline silicon core with diameter about 3~5 nm was clearly revealed. When the growth time was prolonged, the lengths of the nanowires increased, but their diameters were still less than 7 run. Influenced by the quantum effect, Raman spectrum of the silicon nanowires was found to be blue shifted. Considering thermodynamics of nucleation, we presumed that the ambiance pressure was the decisive factor for the small size nanowires growth.
  • Keywords
    Raman spectra; elemental semiconductors; nanowires; nucleation; self-assembly; semiconductor growth; silicon; spectral line shift; transmission electron microscopy; Raman spectrum; Si; TEM; argon gas; blue shift; crystalline silicon core; high-resolution transmission electron microscopy; nucleation; pressure 2.8 MPa; quantum effect; self-assembled silicon nanowires; silicon monoxide; temperature 480 C; thermodynamics; Argon; Crystalline materials; Crystallization; Nanowires; Pressure control; Protection; Self-assembly; Silicon; Temperature control; Transmission electron microscopy; Nanomaterials; Self-assembled; Silicon nanowires; Small diameter;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Nanoelectronics Conference, 2008. INEC 2008. 2nd IEEE International
  • Conference_Location
    Shanghai
  • Print_ISBN
    978-1-4244-1572-4
  • Electronic_ISBN
    978-1-4244-1573-1
  • Type

    conf

  • DOI
    10.1109/INEC.2008.4585532
  • Filename
    4585532