DocumentCode :
2367104
Title :
Synthesis of self-assembled silicon nanowires with uniform small diameter
Author :
Chen, Y.W. ; Jiang, S.H. ; Liu, L.B. ; Shao, B.X. ; Rong, R.F. ; Gu, Z.G. ; Wang, R.C.
Author_Institution :
Dept. of Mater. Sci., Fudan Univ., Shanghai
fYear :
2008
fDate :
24-27 March 2008
Firstpage :
480
Lastpage :
484
Abstract :
Self-assembled silicon nanowires were synthesized with silicon monoxide as starting materials and argon as protection gas. The growth temperature was controlled at 480degC with the pressure at 2.8 MPa. Transmission electron microscopy (TEM) showed that the diameter of the silicon nanowires distributed form 5 run to 7 nm. In the high-resolution TEM image, the crystalline silicon core with diameter about 3~5 nm was clearly revealed. When the growth time was prolonged, the lengths of the nanowires increased, but their diameters were still less than 7 run. Influenced by the quantum effect, Raman spectrum of the silicon nanowires was found to be blue shifted. Considering thermodynamics of nucleation, we presumed that the ambiance pressure was the decisive factor for the small size nanowires growth.
Keywords :
Raman spectra; elemental semiconductors; nanowires; nucleation; self-assembly; semiconductor growth; silicon; spectral line shift; transmission electron microscopy; Raman spectrum; Si; TEM; argon gas; blue shift; crystalline silicon core; high-resolution transmission electron microscopy; nucleation; pressure 2.8 MPa; quantum effect; self-assembled silicon nanowires; silicon monoxide; temperature 480 C; thermodynamics; Argon; Crystalline materials; Crystallization; Nanowires; Pressure control; Protection; Self-assembly; Silicon; Temperature control; Transmission electron microscopy; Nanomaterials; Self-assembled; Silicon nanowires; Small diameter;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Nanoelectronics Conference, 2008. INEC 2008. 2nd IEEE International
Conference_Location :
Shanghai
Print_ISBN :
978-1-4244-1572-4
Electronic_ISBN :
978-1-4244-1573-1
Type :
conf
DOI :
10.1109/INEC.2008.4585532
Filename :
4585532
Link To Document :
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