Title :
A New Isolation Technique for Reverse Blocking IGBT with Ion Implantation and Laser Annealing to Tapered Chip Edge Sidewalls
Author :
Shimoyama, Kazuo ; Takei, Manabu ; Souma, Yasuhisa ; Yajima, Ayako ; Kajiwara, Satomi ; Nakazawa, Haruo
Author_Institution :
Device Technol. Lab., Fuji Electr. Adv. Technol., Co. Ltd., Matsumoto
Abstract :
This paper presents a new isolation technique for high breakdown voltage RB-IGBT, whose termination area is extremely small in comparison with conventional isolation technique with thermal diffusion. The p+ isolation layer for the reverse blocking capability was successively fabricated with negligible thermal budget by means of ion implantation and laser annealing to the chip edges. Sufficient blocking capability over 1200V was demonstrated with the new method
Keywords :
insulated gate bipolar transistors; ion implantation; isolation technology; laser beam annealing; semiconductor device breakdown; IGBT reverse blocking; RB-IGBT; ion implantation; isolation technique; laser annealing; p+ isolation layer; reverse blocking capability; tapered chip edge sidewalls; thermal diffusion; Anisotropic magnetoresistance; Annealing; Bidirectional control; Diodes; Fabrication; Insulated gate bipolar transistors; Ion implantation; Isolation technology; Surface emitting lasers; Switches;
Conference_Titel :
Power Semiconductor Devices and IC's, 2006. ISPSD 2006. IEEE International Symposium on
Conference_Location :
Naples
Print_ISBN :
0-7803-9714-2
DOI :
10.1109/ISPSD.2006.1666063
