A New Isolation Technique for Reverse Blocking IGBT with Ion Implantation and Laser Annealing to Tapered Chip Edge Sidewalls

Author

Shimoyama, Kazuo ; Takei, Manabu ; Souma, Yasuhisa ; Yajima, Ayako ; Kajiwara, Satomi ; Nakazawa, Haruo

Author_Institution

Device Technol. Lab., Fuji Electr. Adv. Technol., Co. Ltd., Matsumoto

fYear

2006

fDate

4-8 June 2006

Firstpage

1

Lastpage

4

Abstract

This paper presents a new isolation technique for high breakdown voltage RB-IGBT, whose termination area is extremely small in comparison with conventional isolation technique with thermal diffusion. The p+ isolation layer for the reverse blocking capability was successively fabricated with negligible thermal budget by means of ion implantation and laser annealing to the chip edges. Sufficient blocking capability over 1200V was demonstrated with the new method

Keywords

insulated gate bipolar transistors; ion implantation; isolation technology; laser beam annealing; semiconductor device breakdown; IGBT reverse blocking; RB-IGBT; ion implantation; isolation technique; laser annealing; p+ isolation layer; reverse blocking capability; tapered chip edge sidewalls; thermal diffusion; Anisotropic magnetoresistance; Annealing; Bidirectional control; Diodes; Fabrication; Insulated gate bipolar transistors; Ion implantation; Isolation technology; Surface emitting lasers; Switches;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices and IC's, 2006. ISPSD 2006. IEEE International Symposium on

Conference_Location

Naples

Print_ISBN

0-7803-9714-2

Type

conf

DOI

10.1109/ISPSD.2006.1666063

Filename

1666063