Novel Enhanced-Planar IGBT Technology Rated up to 6.5kV for Lower Losses and Higher SOA Capability

Author

Rahimo, M. ; Kopta, A. ; Linder, S.

Author_Institution

ABB Switzerland Ltd., Lenzburg

fYear

2006

fDate

4-8 June 2006

Firstpage

1

Lastpage

4

Abstract

In this paper, we introduce an IGBT planar technology, which sets a new performance benchmark in terms of losses and SOA capability. The improved trade-off relationship between on-state losses V_ce(sat) and turn-off losses E_off (i.e. technology curve) was solely realized by means of planar cell enhancement. Simultaneously, high levels of turn-off ruggedness (RBSOA) were obtained with the new cell design. The enhanced-planar IGBT technology is implemented on the soft-punch-through (SPT) buffer concept for ensuring controllable and soft switching behaviour. The paper covers design details of the enhanced-planar technology and a full set of results for the 6500V EP-IGBT chip

Keywords

insulated gate bipolar transistors; power bipolar transistors; semiconductor device breakdown; semiconductor device reliability; 6.5 kV; IGBT planar technology; RBSOA; SOA capability; SPT buffer; enhanced-planar IGBT; on-state losses; planar cell enhancement; soft switching; soft-punch-through; technology curve; turn-off losses; turn-off ruggedness; Anodes; Controllability; Cooling; Insulated gate bipolar transistors; Paper technology; Performance loss; Prototypes; Robustness; Semiconductor optical amplifiers; Voltage control;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices and IC's, 2006. ISPSD 2006. IEEE International Symposium on

Conference_Location

Naples

Print_ISBN

0-7803-9714-2

Type

conf

DOI

10.1109/ISPSD.2006.1666064

Filename

1666064