Title :
A Complementary RF-LDMOS Architecture Compatible with 0.13 μm CMOS Technology
Author :
Mohapatra, N.R. ; Ruecker, H. ; Ehwald, K.E. ; Sorge, R. ; Barth, R. ; Schley, P. ; Schmidt, D. ; Wulf, H.E.
Author_Institution :
IHP, Frankfurt
Abstract :
In this paper, we present a modular and reliable complementary RF LDMOS (laterally diffused MOS) architecture fully compatible with a 0.13 mum CMOS platform. We demonstrate BVDS*fT values up to 560 and 210 GHzV, respectively, for N- and PLDMOS transistors. A major advantage of the proposed process flow is that the drift region of N- and PLDMOS transistors can be independently optimized for different BVDSwithout affecting the VT
Keywords :
MOSFET; millimetre wave field effect transistors; semiconductor device reliability; 0.13 micron; CMOS technology; NMOS transistors; PLDMOS transistors; RF-LDMOS architecture; drift region; laterally diffused MOS architecture; BiCMOS integrated circuits; Breakdown voltage; CMOS process; CMOS technology; Frequency conversion; Immune system; Implants; MOSFETs; Radio frequency; Threshold voltage;
Conference_Titel :
Power Semiconductor Devices and IC's, 2006. ISPSD 2006. IEEE International Symposium on
Conference_Location :
Naples
Print_ISBN :
0-7803-9714-2
DOI :
10.1109/ISPSD.2006.1666065
