DocumentCode :
2367296
Title :
Mathematical model of a photodiode and photo receiving device on the field-effect transistor with p-n controlling junction as a current amplifier
Author :
Yunusov, N. ; Atametov, R.K. ; Yuldasheva, Sh.N.
Author_Institution :
Tashkent Univ. of Inf. Technol., Tashkent
fYear :
2007
fDate :
26-28 Sept. 2007
Firstpage :
1
Lastpage :
2
Abstract :
The quantity ratio simulating the characteristics of a photodiode and photo receiving device on the field-effect transistor with p-n controlling junction as a current amplifier as a power function of input optical radiation is presented in the work.
Keywords :
amplifiers; field effect transistors; p-n junctions; photodiodes; current amplifier; field-effect transistor; optical radiation; p-n controlling junction; photo receiving device; photodiode; FETs; Mathematical model; Optical amplifiers; Optical control; Optical devices; P-n junctions; Photodiodes; Power amplifiers; Semiconductor optical amplifiers; Stimulated emission;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Internet, 2007. ICI 2007. 3rd IEEE/IFIP International Conference in Central Asia on
Conference_Location :
Tashkent
Print_ISBN :
978-1-4244-1007-1
Type :
conf
DOI :
10.1109/CANET.2007.4401699
Filename :
4401699
Link To Document :
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