Analytical threshold voltage model using NEGF approach for nanoscale double-gate MOSFETs

An analytical compact threshold voltage model is developed, which accounts for the narrow-channel effect, the short-channel effect, and the oxide-thickness effect in the nanoscale double-gate (DG) MOSFETs. The two-dimensional non-equilibrium Greenpsilas function (NEGF) approach coupled self-consistently with Poissonpsilas equation is applied to simulate the threshold voltage in comparison with the model. The results show that this model can accurately predict the threshold voltage. This model features simple forms and concise physical meanings, and can serve as a means in predicting the threshold voltage for nanoscale double-gate MOSFETs.