DocumentCode :
2367335
Title :
Tunning electrical characteristics for networked carbon nanotube field-effect transistors using thiolated molecules
Author :
Lee, Chun Wei ; Dong, Xiaochen ; Zhang, Keke ; Tangtang, H. ; Mhaisalkar, S.G. ; Li, Lain-Jong
Author_Institution :
Sch. of Mater. Sci. & Eng., Nanyang Technol. Univ., Singapore
fYear :
2008
fDate :
24-27 March 2008
Firstpage :
542
Lastpage :
544
Abstract :
We examine the effects of adsorption of four thiolated molecules (HS-C10H21, HS-C11H22OH, HS-C10H20COOH, and HS-C2H4C4F9) on the electrical characteristics of single-walled carbon nanotube network FETs (SNFETs). Measuring the work function of the electrodes before and after molecule adsorption and performing Schottky barrier energy extraction for SNFETs provide direct evidence that the device characteristics of SNFETs after SAM adsorption are altered primarily due to the change in energy-level alignment between the An and SWNTs. We also demonstrate that the electrical characteristics of SNFETs can be modified by introducing thiolated heme on An electrodes and by using the location-selective photo-irradiation method, which provides an effective methodology for the fine-tuning and performance optimization of these devices in a controllable way.
Keywords :
Schottky barriers; carbon nanotubes; electrodes; field effect transistors; gold; nanotube devices; organic compounds; Au; C; SNFET; Schottky barrier; carbon nanotube field-effect transistor; gold electrodes; location-selective photo-irradiation method; single-walled carbon nanotube network FET; thiolated molecules; tunning electrical characteristics; CNTFETs; Electric variables; Nanoelectronics;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Nanoelectronics Conference, 2008. INEC 2008. 2nd IEEE International
Conference_Location :
Shanghai
Print_ISBN :
978-1-4244-1572-4
Electronic_ISBN :
978-1-4244-1573-1
Type :
conf
DOI :
10.1109/INEC.2008.4585545
Filename :
4585545
Link To Document :
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