DocumentCode
2367335
Title
Tunning electrical characteristics for networked carbon nanotube field-effect transistors using thiolated molecules
Author
Lee, Chun Wei ; Dong, Xiaochen ; Zhang, Keke ; Tangtang, H. ; Mhaisalkar, S.G. ; Li, Lain-Jong
Author_Institution
Sch. of Mater. Sci. & Eng., Nanyang Technol. Univ., Singapore
fYear
2008
fDate
24-27 March 2008
Firstpage
542
Lastpage
544
Abstract
We examine the effects of adsorption of four thiolated molecules (HS-C10H21, HS-C11H22OH, HS-C10H20COOH, and HS-C2H4C4F9) on the electrical characteristics of single-walled carbon nanotube network FETs (SNFETs). Measuring the work function of the electrodes before and after molecule adsorption and performing Schottky barrier energy extraction for SNFETs provide direct evidence that the device characteristics of SNFETs after SAM adsorption are altered primarily due to the change in energy-level alignment between the An and SWNTs. We also demonstrate that the electrical characteristics of SNFETs can be modified by introducing thiolated heme on An electrodes and by using the location-selective photo-irradiation method, which provides an effective methodology for the fine-tuning and performance optimization of these devices in a controllable way.
Keywords
Schottky barriers; carbon nanotubes; electrodes; field effect transistors; gold; nanotube devices; organic compounds; Au; C; SNFET; Schottky barrier; carbon nanotube field-effect transistor; gold electrodes; location-selective photo-irradiation method; single-walled carbon nanotube network FET; thiolated molecules; tunning electrical characteristics; CNTFETs; Electric variables; Nanoelectronics;
fLanguage
English
Publisher
ieee
Conference_Titel
Nanoelectronics Conference, 2008. INEC 2008. 2nd IEEE International
Conference_Location
Shanghai
Print_ISBN
978-1-4244-1572-4
Electronic_ISBN
978-1-4244-1573-1
Type
conf
DOI
10.1109/INEC.2008.4585545
Filename
4585545
Link To Document