• DocumentCode
    2367356
  • Title

    Modeling and simulation of spatial dependent transient diffusion after BF2 implantation

  • Author

    Hofler, Alxander ; Feudel, Thomas ; Strecker, Norbert ; Fichtner, Wolfgang ; Suzuki, Kenji ; Sasaki, Nobuo ; Kataoka, Yuji ; Gratsch, F.

  • Author_Institution
    Integrated Syst. Lab., Eidgenossische Tech. Hochschule, Zurich, Switzerland
  • fYear
    1996
  • fDate
    2-4 Sept. 1996
  • Firstpage
    13
  • Lastpage
    14
  • Abstract
    In this paper, we study the effect of high-dose BF2 implantation/annealing sequences on the redistribution of dopant atoms already present in silicon crystal. Transient diffusion and activation effects are investigated using numerical simulation and experimental data obtained from silicon samples containing a buried layer of boron.
  • Keywords
    annealing; diffusion; doping profiles; ion implantation; semiconductor device models; Si:BF4; activation effects; annealing sequence; dopant redistribution; ion implantation; numerical simulation; spatial dependent transient diffusion; transient diffusion; Annealing; Boron; Crystallization; Implants; Laboratories; Semiconductor device modeling; Semiconductor process modeling; Silicon; Tail; Temperature;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Simulation of Semiconductor Processes and Devices, 1996. SISPAD 96. 1996 International Conference on
  • Print_ISBN
    0-7803-2745-4
  • Type

    conf

  • DOI
    10.1109/SISPAD.1996.865250
  • Filename
    865250
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2367356