Title :
Boron diffusion model refinement and its effect on the calculation of reverse short channel effect
Author :
Hane, Masami ; Rafferty, Conor S. ; Ikezawa, Takeo ; Matsumoto, Hiroshi
Author_Institution :
Microelectron. Res. Labs., NEC Corp., Sagamihara, Japan
Abstract :
The reverse short channel effect (RSCE) of flat channel profile nMOSFET was studied by modelling the dopant diffusion process and considering its parameter dependence. It was found that the binding energy between boron (B) and interstitial silicon (I) is one of the key parameters for the quantitative description of the boron diffusion and the RSCG.
Keywords :
MOSFET; boron; diffusion; doping profiles; semiconductor device models; semiconductor doping; silicon; RSCE; Si:B; binding energy; diffusion model refinement; dopant diffusion process; flat channel profile; nMOSFET; parameter dependence; reverse short channel effect; Bismuth; Boron; Diffusion processes; Laboratories; MOSFET circuits; Microelectronics; National electric code; Semiconductor process modeling; Silicon; Threshold voltage;
Conference_Titel :
Simulation of Semiconductor Processes and Devices, 1996. SISPAD 96. 1996 International Conference on
Print_ISBN :
0-7803-2745-4
DOI :
10.1109/SISPAD.1996.865251
